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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 200 ns Inductive Fall Time -- 25_C (Typ) 1.8 s Inductive Storage Time -- 25_C (Typ) Operating Temperature Range -65 to + 200_C * Switching Regulators * Inverters * Solenoid and Relay Drivers * Motor Controls * Deflection Circuits Fast Turn Off Times 100_C Performance Specified for: (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle (1) Similar device types available with lower VCEO ratings, see the MJ13330 (200 V) and MJ13331 (250 V). (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The MJ13333 transistor is designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: Designer's and SWITCHMODE are trademarks of Motorola, Inc. Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. SWITCHMODE Series NPN Silicon Power Transistor Designer'sTM Data Sheet SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 1 Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Base Current -- Continuous Peak (1) Collector Current -- Continuous Peak (1) Emitter Base Voltage Collector-Emitter voltage Collector-Emitter Voltage Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents Characteristic Rating v10%. Symbol Symbol TJ, Tstg VCEO VCEV RJC VEB IC ICM IB IBM PD TL - 65 to + 200 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS MJ13333 Value Max 275 175 100 1.0 700 400 1.0 6.0 10 15 20 30 Order this document by MJ13333/D CASE 1-07 TO-204AA (TO-3) Watts W/_C _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I 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II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I I I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJ13333 (1) Pulse Test: PW = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time Crossover Time Storage Time Crossover Time Storage Time Inductive Load, Clamped (Table 1) Fall Time Storage Time Rise Time Delay Time Resistive Load (Table 1) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) Base Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) (IC = 10 Adc, IB = 2.0 Adc, TC = 100_C) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 2.0 Adc) (IC = 20 Adc, IB = 6.7 Adc) (IC = 10 Adc, IB = 2.0 Adc, TC = 100_C) DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with base forward biased Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 , TC = 100_C) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) 2 (IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A, VBE(off) = 5 Vdc, TC = 25_C) (IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A, VBE(off) = 5 Vdc, TC = 100C) (VCC = 250 Vdc, IC = 10 A, IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 s, 2.0%) Duty Cycle Characteristic v 2%. v VCEO(sus) VCE(sat) VBE(sat) Symbol RBSOA IEBO ICER ICEV Cob hFE IS/b tsv tsv Motorola Bipolar Power Transistor Device Data td tfi tr tf tc tc ts Min 125 400 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.02 Typ See Figure 13 See Figure 12 0.2 0.4 1.8 0.8 2.5 0.3 1.6 0.3 -- -- -- -- -- -- -- -- -- -- -- -- 0.25 5.0 Max 500 2.0 5.0 0.7 4.0 0.7 0.1 1.8 1.8 1.8 5.0 2.4 1.0 5.0 60 -- -- -- -- mAdc mAdc mAdc Unit Vdc Vdc Vdc pF s s s s s s s s s -- MJ13333 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 150C hFE, DC CURRENT GAIN 50 2.0 1.6 1A 5A 10 A 1.2 25C 20 VCE = 5 V 10 0.8 0.4 5.0 0.2 0.5 5.0 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) 10 20 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (AMP) 2.0 5.0 10 Figure 1. DC Current Gain VBE(sat) , BASE-EMITTER SATURATION VOLTAGE (VOLTS) Figure 2. Collector Saturation Region VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 IC/IB = 5 1.6 2.0 IC/IB = 5 1.6 1.2 1.2 25C 0.8 150C 0.8 0.4 25C 0 0.2 150C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) 0.4 0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP) Figure 3. Collector-Emitter Saturation Region Figure 4. Base-Emitter Voltage 104 IC, COLLECTOR CURRENT ( A) 103 TJ = 150C 102 101 125C 100C 75C REVERSE 25C 10-1 - 0.4 FORWARD VCE = 250 V C, CAPACITANCE (pF) 3000 2000 Cib 1000 700 500 200 Cob 100 50 100 - 0.2 0 + 0.2 + 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) + 0.6 30 0.1 0.5 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) 500 1000 Figure 5. Collector Cutoff Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3 MJ13333 IC pk 90% Vclamp IC tsv trv tc 10% Vclamp 90% IB1 Vclamp 90% IC tfi tti SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 - 90% Vclamp tfi = Current Fall Time, 90 - 10% IC tti = Current Tail, 10 - 2% IC tc = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT = 1/2 VCCIC(tc)f In general, trv + t fi t c . However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers, However, for designers of high frequency converter circuits, the user oriented specifications which make this a "SWITCHMODE" transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100C. VCE IB 10% IC pk 2% IC TIME Figure 7. Inductive Switching Measurements 10 IB2(pk), BASE CURRENT (AMP) IC = 10 A IB1 = 2 A Vclamp = 250 V TJ = 25C 7.0 ] 5.0 2.0 0 2.0 5.0 10 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 8. Reverse Base Current versus VBE(off) With No External Base Resistance RESISTIVE SWITCHING PERFORMANCE 2.0 1.0 0.5 t, TIME ( s) VCC = 250 V IC/IB = 5 5.0 2.0 tr 1.0 t, TIME ( s) 0.5 VCE = 250 V IC/IB = 5 VBE(off) = 5 V ts 0.2 0.1 0.05 td 0.02 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 tf 0.2 0.1 0.05 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 9. Turn-On Switching Times Figure 10. Turn-Off Switching Times 4 Motorola Bipolar Power Transistor Device Data MJ13333 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING +15 V 250 F 470 2W 47 R1 RESISTIVE SWITCHING 15 V TURN-ON TIME 0 +10 V 20 1 330 1 2 50 100 39 - 5.2 250 F 5.1 5W R2 2 IB1 adjusted to obtain the forced hFE desired TURN-OFF TIME 430 All Diodes -- 1N4934 All NPN -- MJE200 All PNP -- MJE210 Adjust R1 to obtain IB1 For switching and RBSOA, R2 = 0 For VCEO(sus), R2 = Use inductive switching driver as the input to the resistive test circuit. IB1 1 2 INPUT CONDITIONS 0 PW Varied to Attain IC = 100 mA CIRCUIT VALUES Lcoil = 80 mH, VCC = 10 V Rcoil = 0.7 Lcoil = 180 H Rcoil = 0.05 VCC = 20 V Vclamp = 250 V RB adjusted to attain desired IB1 VCC = 250 V RL = 50 Pulse Width = 10 s INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS IC TEST CIRCUITS t1 Adjusted to Obtain IC t1 t2 Lcoil (IC VCC Lcoil (IC pk VClamp ) pk ) RESISTIVE TEST CIRCUIT TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1 Rcoil Lcoil VCC VCE IC(pk) t1 tf TUT 1 2 RL VCC tf Clamped t VCE or Vclamp TIME t2 t Test Equipment Scope -- Tektronix 475 or Equivalent r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) t1 t2 DUTY CYCLE, D = t1/t2 30 50 100 200 300 500 1000 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 t, TIME (ms) 10 20 Figure 11. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MJ13333 50 IC, COLLECTOR CURRENT (AMP) 20 10 5 2 1 0.2 0.1 0.05 BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT MJ13333 6 10 200 350 450 600 20 50 100 400 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) dc 100 s 10 s SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 12 is based on TC = 25_C. T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 12 may be found at any case temperature by using the appropriate curve on Figure 14. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS 1 ms 0.02 0.01 0.005 Figure 12. Forward Bias Safe Operating Area I C(pk), PEAK COLLECTOR CURRENT (AMPS) 20 16 12 8.0 IC/IB 5 VBE(off) = 5 V TJ = 100C 4.0 0 100 200 300 600 400 500 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current condition allowable during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 13 gives the complete RBSOA characteristics. Figure 13. RBSOA, Reverse Bias Switching Safe Operating Area 100 POWER DERATING FACTOR (%) FORWARD BIAS SECOND BREAKDOWN DERATING 80 60 THERMAL DERATING 40 20 0 0 40 120 80 TC, CASE TEMPERATURE (C) 160 200 Figure 14. Power Derating 6 Motorola Bipolar Power Transistor Device Data MJ13333 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 7 MJ13333 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Bipolar Power Transistor Device Data *MJ13333/D* MJ13333/D |
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